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Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, today announced that it has solidified its leadership position in the server memory market with a new 8GB product offering. Following the introduction of its
8GB Registered Dual In-line Memory Module (R-DIMM) in October, Samsung has now increased the density of its Fully Buffered Dual In-line Memory Module product line-up (FB-DIMM) to include 8GBs by adopting 80 nanometer 2Gb DDR for high-speed servers. This represents a significant leap forward in advanced server memory architecture.

OEMs that use Samsung's high-density memory can increase the amount of installed memory and keep slots in reserve for future upgrades. Samsung memory such as the new 8GB FB-DIMM is ideal for space-constrained applications in blade and 1U servers.


With Samsung's high-density memory modules, designers can take full advantage of increased memory support in the latest server operating system to maximize performance. In addition, Samsung is offering next-generation memory solutions such as the 8GB FB-DIMM to allow servers to benefit from ultimate memory density and bandwidth.

Samsung's complete product portfolio includes all variations of DRAM memory from DDR to DDR2, and R-DIMMs to FB-DIMMs with densities ranging from 512MB all the way to 8GBs.